|Supply Voltage (DC)|
8.00 V (min), 48.0 V (max)
|Number of Pins|
|REACH SVHC Compliance|
-40.0 °C to 125 °C
|Manufacturer||Analog Devices / Linear Technology|
|Manufacturer Part Number||LT1910IS8#PBF|
|Description||MOSFET DRVR 0.065V 1-OUT Hi Side Non-Inv 8-Pin SOIC N|
The LT1910IS8#PBF is a protected high-side MOSFET Driver allows the use of N-channel power MOSFETs for high side switching applications. It contains a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components. When the internal drain comparator senses that the switch current has exceeded the preset level, the switch is turned off and a fault flag is asserted. The switch remains off for a period of time set by an external timing capacitor and then automatically attempts to restart. If the fault still exists, this cycle repeats until the fault are removed, thus protecting the MOSFET. The fault flag becomes inactive once the switch restarts successfully. The LT1910 has been specifically designed for harsh operating environments such as industrial, avionics and automotive applications where poor supply regulation or transients may be present. The device will not sustain damage from supply transients of -15 to 60V.
- Protected from -15 to 60V supply transients
- Short-circuit protection
- Automatic restart timer
- Open-collector fault flag
- Fully enhances N-channel MOSFET switches
- Programmable current limit, delay time and auto restart period
- Voltage limited gate drive
- Defaults to off state with open input
Infineon IRF5210SPBF0 out of 5(0)
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from IRF5210S/L
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- Worldwide best RDS(on)*area amongst the silicon based devices
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