|REACH SVHC Compliance||
|Number of Pins||
-55.0 °C to 175 °C
|Manufacturer Part Number||AUIRF3710ZS|
|Description||Transistor MOSFET N-CH 100V 59A 3-Pin(2+Tab) D2PAK T/R|
The AUIRF3710ZS is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
- Low on-resistance
- Fully avalanche rated
- Repetitive avalanche allowed up to Tjmax
- Automotive qualified
- 175°C Operating temperature
Analog Devices / Linear Technology LT1910IS8#PBF0 out of 5(0)
The LT1910IS8#PBF is a protected high-side MOSFET Driver allows the use of N-channel power MOSFETs for high side switching applications. It contains a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components. When the internal drain comparator senses that the switch current has exceeded the preset level, the switch is turned off and a fault flag is asserted. The switch remains off for a period of time set by an external timing capacitor and then automatically attempts to restart. If the fault still exists, this cycle repeats until the fault are removed, thus protecting the MOSFET. The fault flag becomes inactive once the switch restarts successfully. The LT1910 has been specifically designed for harsh operating environments such as industrial, avionics and automotive applications where poor supply regulation or transients may be present. The device will not sustain damage from supply transients of -15 to 60V.
- Protected from -15 to 60V supply transients
- Short-circuit protection
- Automatic restart timer
- Open-collector fault flag
- Fully enhances N-channel MOSFET switches
- Programmable current limit, delay time and auto restart period
- Voltage limited gate drive
- Defaults to off state with open input
ON Semiconductor MMBT2907A0 out of 5(0)
The MMBT2907A is a PNP general purpose Transistor for amplifier and switching applications that require up to 500mA. High DC current gain and available with ultra small surface mount package.
- High current gain bandwidth
- 45ns Turn-on time
- 100ns Turn-off time
Infineon IRFS4010-7PPBF0 out of 5(0)
The IRFS4010-7PPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Diodes Inc. FMMT591A0 out of 5(0)
The FMMT591A is a PNP silicon planar medium power Bipolar Transistor offers 350mΩ low equivalent on resistance RCE (sat) at 1A.
- FMMT491A Complementary NPN type
- -55 to 150°C Operating temperature range