| Rise Time | 12.0 ns |
|---|---|
| Lifecycle Status | Active |
| Mounting Style | Surface Mount |
| Operating Temperature | -55.0 °C to 150 °C |
| Continuous Drain Current (Ids) | 18.0 A |
| Output Current | 2.50 A (max) |
| Case/Package | SOIC |
| Current Rating | 18.0 A |
| Packaging | Cut Tape (CT) |
| Polarity | N-Channel |
| REACH SVHC Compliance | No SVHC |
| RoHS | Compliant |
| Drain to Source Voltage (Vds) | 40.0 V |
| Power Dissipation | 2.50 W (max) |
| Part Family | IRF7842 |
| Voltage Rating (DC) | 40.0 V |
| Number of Pins | 8 |
| Lead-Free Status | Lead Free |
Transistors
| Manufacturer | Infineon |
|---|---|
| Manufacturer Part Number | IRF7842PBF |
| Description | MOSFET 40V 1 N-CH HEXFET 5mOhms 33nC |
| Stock Code | W000250 |
| Download |  Technical Datasheet |
The IRF7842PBF is a HEXFET single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The synchronous MOSFET is suitable for Notebook processor power, isolated and non-isolated DC-to-DC converters.
- Low gate charge
- Fully characterized avalanche voltage and current
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
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