-55.0 °C to 150 °C
|Continuous Drain Current (Ids)||
2.50 A (max)
Cut Tape (CT)
|REACH SVHC Compliance||
|Drain to Source Voltage (Vds)||
2.50 W (max)
|Voltage Rating (DC)||
|Number of Pins||
|Manufacturer Part Number||IRF7842PBF|
|Description||MOSFET 40V 1 N-CH HEXFET 5mOhms 33nC|
The IRF7842PBF is a HEXFET single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The synchronous MOSFET is suitable for Notebook processor power, isolated and non-isolated DC-to-DC converters.
- Low gate charge
- Fully characterized avalanche voltage and current
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Vishay IRFL110TRPBF0 out of 5(0)
The IRFL110TRPBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
International Rectifier IRLML2502PBF0 out of 5(0)
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 35mohm at Vgs 4.5V
- Power dissipation Pd of 1.25W at 25°C
- Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
Infineon AUIRF3710ZS0 out of 5(0)
The AUIRF3710ZS is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
- Low on-resistance
- Fully avalanche rated
- Repetitive avalanche allowed up to Tjmax
- Automotive qualified
- 175°C Operating temperature
Nexperia BSH114,2150 out of 5(0)
The BSH114,215 is a 100V N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS™1 technology. Low on resistance and fast switching performance makes this device suitable for use in relays and DC to DC converters applications.
- 150°C Junction temperature
- Low conduction losses
Infineon IRFS4010-7PPBF0 out of 5(0)
The IRFS4010-7PPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability