| Polarity | P-Channel |
|---|---|
| Lead-Free Status | Lead Free |
| Mounting Style | Surface Mount |
| Operating Temperature | -55.0 °C to 150 °C |
| Lifecycle Status | Active |
| Current Rating | -4.30 A |
| Continuous Drain Current (Ids) | -4.30 A |
| Packaging | Cut Tape (CT) |
| Number of Pins | 3 |
| Part Family | IRLML6401 |
| RoHS | Compliant |
| Drain to Source Voltage (Vds) | -12.0 V |
| Power Dissipation | 1.30 W |
| Voltage Rating (DC) | -12.0 V |
| Rise Time | 32.0 ns |
| REACH SVHC Compliance | No SVHC |
| Case/Package | SOT-23 |
Transistors
| Manufacturer | Infineon |
|---|---|
| Manufacturer Part Number | IRLML6401TRPBF |
| Description | MOSFET P-CH 12V 4.3A 3-Pin |
| Stock Code | W008167 |
| Download |  Technical Datasheet |
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
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