| Polarity | P-Channel |
|---|---|
| Lead-Free Status | Lead Free |
| Mounting Style | Surface Mount |
| Operating Temperature | -55.0 °C to 150 °C |
| Lifecycle Status | Active |
| Current Rating | -4.30 A |
| Continuous Drain Current (Ids) | -4.30 A |
| Packaging | Cut Tape (CT) |
| Number of Pins | 3 |
| Part Family | IRLML6401 |
| RoHS | Compliant |
| Drain to Source Voltage (Vds) | -12.0 V |
| Power Dissipation | 1.30 W |
| Voltage Rating (DC) | -12.0 V |
| Rise Time | 32.0 ns |
| REACH SVHC Compliance | No SVHC |
| Case/Package | SOT-23 |
Transistors
| Manufacturer | Infineon |
|---|---|
| Manufacturer Part Number | IRLML6401TRPBF |
| Description | MOSFET P-CH 12V 4.3A 3-Pin |
| Stock Code | W008167 |
| Download |  Technical Datasheet |
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.
Related products
-
Transistors
Infineon IRF7842PBF
The IRF7842PBF is a HEXFET single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The synchronous MOSFET is suitable for Notebook processor power, isolated and non-isolated DC-to-DC converters.
- Low gate charge
- Fully characterized avalanche voltage and current
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
SKU: W000250 -
Transistors
Vishay IRFL110TRPBF
The IRFL110TRPBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
SKU: W000327 -
Transistors
ON Semiconductor BSS138
This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS138 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
SKU: W005537 -
Transistors
International Rectifier IRLML2502PBF
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 35mohm at Vgs 4.5V
- Power dissipation Pd of 1.25W at 25°C
- Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
SKU: W000325
