| Rise Time | 10.0 ns |
|---|---|
| Power Dissipation | 1.25 W |
| RoHS | Compliant |
| Drain to Source Voltage (Vds) | 20.0 V |
| REACH SVHC Compliance | No SVHC |
| Polarity | N-Channel |
| Number of Pins | 3 |
| Case/Package | SOT-23 |
| Operating Temperature | -55.0 °C to 150 °C |
| Packaging | Cut Tape (CT) |
| Continuous Drain Current (Ids) | 4.20 A |
Transistors
| Manufacturer | International Rectifier |
|---|---|
| Manufacturer Part Number | IRLML2502PBF |
| Description | MOSFET N-CH 20V 4.2A SOT-23 |
| Stock Code | W000325 |
| Download |  Technical Datasheet |
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 35mohm at Vgs 4.5V
- Power dissipation Pd of 1.25W at 25°C
- Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
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