175 °C (max)
|Manufacturer Part Number||BUK9Y4R4-40E|
|Description||MOSFET N-CH 40V 100A LFPAK|
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Infineon IRF7842PBF0 out of 5(0)
The IRF7842PBF is a HEXFET single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The synchronous MOSFET is suitable for Notebook processor power, isolated and non-isolated DC-to-DC converters.
- Low gate charge
- Fully characterized avalanche voltage and current
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
STMicroelectronics STB57N65M50 out of 5(0)
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Worldwide best RDS(on)*area amongst the silicon based devices
- Higher VDSS rating, high dv/dt capability
- Excellent switching performance
- Easy to drive, 100% avalanche tested
Infineon IRLML6401TRPBF0 out of 5(0)
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.SKU: W008167
ON Semiconductor NTF3055L108T1G0 out of 5(0)
The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
- AEC-Q101 Qualified
- PPAP capable
Infineon IRF5210SPBF0 out of 5(0)
Features of this design are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
Advanced Process Technology
Ultra Low On-Resistance
150°C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Some Parameters are Different from IRF5210S/L