|REACH SVHC Compliance|
|Number of Pins|
|Voltage Rating (DC)|
Cut Tape (CT), Tape & Reel (TR)
350 mW (max)
150 °C (max)
|Breakdown Voltage [Collector to Emitter]|
|Manufacturer Part Number||MMBT2907A|
|Description||SMD 2N2907 Diode|
The MMBT2907A is a PNP general purpose Transistor for amplifier and switching applications that require up to 500mA. High DC current gain and available with ultra small surface mount package.
- High current gain bandwidth
- 45ns Turn-on time
- 100ns Turn-off time
ON Semiconductor NTF3055L108T1G0 out of 5(0)
The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
- AEC-Q101 Qualified
- PPAP capable
Vishay IRFL110TRPBF0 out of 5(0)
The IRFL110TRPBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
Infineon AUIRF3710ZS0 out of 5(0)
The AUIRF3710ZS is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
- Low on-resistance
- Fully avalanche rated
- Repetitive avalanche allowed up to Tjmax
- Automotive qualified
- 175°C Operating temperature
Nexperia BUK9Y4R4-40E0 out of 5(0)
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.SKU: W000330