150 °C (max)
|Manufacturer Part Number||STB57N65M5|
|Description||N CHANNEL MOSFET, 600V, 42A, D2PAK|
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Worldwide best RDS(on)*area amongst the silicon based devices
- Higher VDSS rating, high dv/dt capability
- Excellent switching performance
- Easy to drive, 100% avalanche tested
Analog Devices / Linear Technology LT1910IS8#PBF0 out of 5(0)
The LT1910IS8#PBF is a protected high-side MOSFET Driver allows the use of N-channel power MOSFETs for high side switching applications. It contains a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components. When the internal drain comparator senses that the switch current has exceeded the preset level, the switch is turned off and a fault flag is asserted. The switch remains off for a period of time set by an external timing capacitor and then automatically attempts to restart. If the fault still exists, this cycle repeats until the fault are removed, thus protecting the MOSFET. The fault flag becomes inactive once the switch restarts successfully. The LT1910 has been specifically designed for harsh operating environments such as industrial, avionics and automotive applications where poor supply regulation or transients may be present. The device will not sustain damage from supply transients of -15 to 60V.
- Protected from -15 to 60V supply transients
- Short-circuit protection
- Automatic restart timer
- Open-collector fault flag
- Fully enhances N-channel MOSFET switches
- Programmable current limit, delay time and auto restart period
- Voltage limited gate drive
- Defaults to off state with open input
Diodes Inc. FMMT591A0 out of 5(0)
The FMMT591A is a PNP silicon planar medium power Bipolar Transistor offers 350mΩ low equivalent on resistance RCE (sat) at 1A.
- FMMT491A Complementary NPN type
- -55 to 150°C Operating temperature range
Infineon IRFS4010-7PPBF0 out of 5(0)
The IRFS4010-7PPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
ON Semiconductor BSS1380 out of 5(0)
This N-Channel enhancement mode MOSFET is produced using a proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. The BSS138 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.SKU: W005537