The LT1910IS8#PBF is a protected high-side MOSFET Driver allows the use of N-channel power MOSFETs for high side switching applications. It contains a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components. When the internal drain comparator senses that the switch current has exceeded the preset level, the switch is turned off and a fault flag is asserted. The switch remains off for a period of time set by an external timing capacitor and then automatically attempts to restart. If the fault still exists, this cycle repeats until the fault are removed, thus protecting the MOSFET. The fault flag becomes inactive once the switch restarts successfully. The LT1910 has been specifically designed for harsh operating environments such as industrial, avionics and automotive applications where poor supply regulation or transients may be present. The device will not sustain damage from supply transients of -15 to 60V.

• Protected from -15 to 60V supply transients
• Short-circuit protection
• Automatic restart timer
• Open-collector fault flag
• Fully enhances N-channel MOSFET switches
• Programmable current limit, delay time and auto restart period
• Voltage limited gate drive
• Defaults to off state with open input

These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

• Low Gate-to-Drain Charge to Reduce
• Switching Losses
• Fully Characterized Capacitance
• Effective COSS to Simplify Design, (See App. Note AN1001)
• Fully Characterized Avalanche Voltage and Current