|Number of Pins||
|Drain to Source Voltage (Vds)||
Cut Tape (CT)
-55.0 °C to 150 °C
|Continuous Drain Current (Ids)||
|Manufacturer Part Number||IRFL110TRPBF|
|Description||MOSFET N-CH 100V 1.5A SOT223|
The IRFL110TRPBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
International Rectifier IRLML2502PBF0 out of 5(0)
The IRLML2502PBF from International Rectifier is 20V single N channel HEXFET power MOSFET in Micro3 (SOT-23) package. This MOSFET features extremely low on resistance per silicon area, ruggedness, fast switching as a result, power MOSFET are well know to provide extremely efficiency and reliability which can be used in wide variety of applications.
- Drain to source voltage (Vds) of 20V
- Gate to source voltage of ±12V
- On resistance Rds(on) of 35mohm at Vgs 4.5V
- Power dissipation Pd of 1.25W at 25°C
- Continuous drain current Id of 4.2A at vgs 4.5V and 25°C
- Operating junction temperature range from -55°C to 150°C
Analog Devices / Linear Technology LT1910IS8#PBF0 out of 5(0)
The LT1910IS8#PBF is a protected high-side MOSFET Driver allows the use of N-channel power MOSFETs for high side switching applications. It contains a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components. When the internal drain comparator senses that the switch current has exceeded the preset level, the switch is turned off and a fault flag is asserted. The switch remains off for a period of time set by an external timing capacitor and then automatically attempts to restart. If the fault still exists, this cycle repeats until the fault are removed, thus protecting the MOSFET. The fault flag becomes inactive once the switch restarts successfully. The LT1910 has been specifically designed for harsh operating environments such as industrial, avionics and automotive applications where poor supply regulation or transients may be present. The device will not sustain damage from supply transients of -15 to 60V.
- Protected from -15 to 60V supply transients
- Short-circuit protection
- Automatic restart timer
- Open-collector fault flag
- Fully enhances N-channel MOSFET switches
- Programmable current limit, delay time and auto restart period
- Voltage limited gate drive
- Defaults to off state with open input
Infineon IRLML6401TRPBF0 out of 5(0)
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.SKU: W008167
Diodes Inc. MMBT2222A0 out of 5(0)
The MMBT2222A-7-F is a 40V NPN Small Signal Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, “Green” molding compound (UL94V-0). Complementary PNP type transistor is MMBT2907A. The transistor is ideal for low power amplification and switching.
- Epitaxial planar die construction
- Halogen and antimony-free
- Green device
- Qualified to AEC-Q101 standards for high reliability