| REACH SVHC Compliance | No SVHC |
|---|---|
| Polarity | P-Channel |
| Drain to Source Voltage (Vds) | -12.0 V |
| Number of Pins | 3 |
| Power Dissipation | 770 mW |
| RoHS | Compliant |
| Drain to Source Resistance (on) (Rds) | 100 mΩ |
| Packaging | Cut Tape (CT) |
| Lead-Free Status | Lead Free |
| Breakdown Voltage [Gate to Source] | -8.00 V to 8.00 V |
| Operating Temperature | -55.0 °C to 150 °C |
| Case/Package | TO-236 |
| Mounting Style | Surface Mount |
| Continuous Drain Current (Ids) | -3.00 A |
Transistors
| Manufacturer | Vishay |
|---|---|
| Manufacturer Part Number | SI2315BDS-T1-E3 |
| Description | MOSFET P-CH 12V 3A SOT-23-3 |
| Stock Code | W022948 |
| Download |  Technical Datasheet |
The SI2315BDS-T1-E3 is a P-channel TrenchFET® Power MOSFET with power dissipation at 750mW.
- ±8V Gate-source voltage
- Halogen-free
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