|REACH SVHC Compliance|
|Drain to Source Voltage (Vds)|
|Number of Pins|
|Continuous Drain Current (Ids)|
-55.0 °C to 175 °C
|Manufacturer Part Number||SUM110P08-11L-E3|
|Description||MOSFET, P CH, 80V, 110A, TO-263, D2PAK|
The SUM110P08-11L-E3 is a P-channel TrenchFET® Power MOSFET with 175°C operating temperature.
- ±20V Gate-source voltage
Diodes Inc. MMBT2222A0 out of 5(0)
The MMBT2222A-7-F is a 40V NPN Small Signal Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, “Green” molding compound (UL94V-0). Complementary PNP type transistor is MMBT2907A. The transistor is ideal for low power amplification and switching.
- Epitaxial planar die construction
- Halogen and antimony-free
- Green device
- Qualified to AEC-Q101 standards for high reliability
Infineon IRF7842PBF0 out of 5(0)
The IRF7842PBF is a HEXFET single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The synchronous MOSFET is suitable for Notebook processor power, isolated and non-isolated DC-to-DC converters.
- Low gate charge
- Fully characterized avalanche voltage and current
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
Vishay IRFL110TRPBF0 out of 5(0)
The IRFL110TRPBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
Infineon IRFS4010-7PPBF0 out of 5(0)
The IRFS4010-7PPBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
- Improved gate, avalanche and dynamic dv/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Infineon BSC028N06NS0 out of 5(0)
The BSC028N06NS is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. The MOSFET features 40% lower RDS (on) than alternative devices. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Saving space
- Very low voltage overshoot
- Superior thermal resistance