|Supply Voltage (DC)|
8.00 V (min), 48.0 V (max)
|Number of Pins|
|REACH SVHC Compliance|
-40.0 °C to 125 °C
|Manufacturer||Analog Devices / Linear Technology|
|Manufacturer Part Number||LT1910IS8#PBF|
|Description||MOSFET DRVR 0.065V 1-OUT Hi Side Non-Inv 8-Pin SOIC N|
The LT1910IS8#PBF is a protected high-side MOSFET Driver allows the use of N-channel power MOSFETs for high side switching applications. It contains a completely self-contained charge pump to fully enhance an N-channel MOSFET switch with no external components. When the internal drain comparator senses that the switch current has exceeded the preset level, the switch is turned off and a fault flag is asserted. The switch remains off for a period of time set by an external timing capacitor and then automatically attempts to restart. If the fault still exists, this cycle repeats until the fault are removed, thus protecting the MOSFET. The fault flag becomes inactive once the switch restarts successfully. The LT1910 has been specifically designed for harsh operating environments such as industrial, avionics and automotive applications where poor supply regulation or transients may be present. The device will not sustain damage from supply transients of -15 to 60V.
- Protected from -15 to 60V supply transients
- Short-circuit protection
- Automatic restart timer
- Open-collector fault flag
- Fully enhances N-channel MOSFET switches
- Programmable current limit, delay time and auto restart period
- Voltage limited gate drive
- Defaults to off state with open input
Infineon IRLML6401TRPBF0 out of 5(0)
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.SKU: W008167
Diodes Inc. MMBT2222A0 out of 5(0)
The MMBT2222A-7-F is a 40V NPN Small Signal Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, “Green” molding compound (UL94V-0). Complementary PNP type transistor is MMBT2907A. The transistor is ideal for low power amplification and switching.
- Epitaxial planar die construction
- Halogen and antimony-free
- Green device
- Qualified to AEC-Q101 standards for high reliability
Infineon AUIRF3710ZS0 out of 5(0)
The AUIRF3710ZS is a 100V single N-channel HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. It features combine to make this design an extremely efficient and reliable device for wide variety of applications.
- Low on-resistance
- Fully avalanche rated
- Repetitive avalanche allowed up to Tjmax
- Automotive qualified
- 175°C Operating temperature
STMicroelectronics STB57N65M50 out of 5(0)
These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency.
- Worldwide best RDS(on)*area amongst the silicon based devices
- Higher VDSS rating, high dv/dt capability
- Excellent switching performance
- Easy to drive, 100% avalanche tested
Nexperia BUK9Y4R4-40E0 out of 5(0)
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.SKU: W000330