175 °C (max)
|Manufacturer Part Number||BUK9Y4R4-40E|
|Description||MOSFET N-CH 40V 100A LFPAK|
Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Infineon IRF7842PBF0 out of 5(0)
The IRF7842PBF is a HEXFET single N-channel Power MOSFET offers fully characterized avalanche voltage and current. The synchronous MOSFET is suitable for Notebook processor power, isolated and non-isolated DC-to-DC converters.
- Low gate charge
- Fully characterized avalanche voltage and current
- Ultra-low gate impedance
- Very low static drain-to-source ON-resistance at 4.5V gate-to-source voltage
ON Semiconductor NTF3055L108T1G0 out of 5(0)
The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
- AEC-Q101 Qualified
- PPAP capable
Infineon BSC028N06NS0 out of 5(0)
The BSC028N06NS is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. The MOSFET features 40% lower RDS (on) than alternative devices. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Saving space
- Very low voltage overshoot
- Superior thermal resistance
Nexperia BSH114,2150 out of 5(0)
The BSH114,215 is a 100V N-channel Enhancement Mode Field Effect Transistor uses TrenchMOS™1 technology. Low on resistance and fast switching performance makes this device suitable for use in relays and DC to DC converters applications.
- 150°C Junction temperature
- Low conduction losses