|REACH SVHC Compliance|
|Number of Pins|
|Voltage Rating (DC)|
Cut Tape (CT), Tape & Reel (TR)
350 mW (max)
150 °C (max)
|Breakdown Voltage [Collector to Emitter]|
|Manufacturer Part Number||MMBT2907A|
|Description||SMD 2N2907 Diode|
The MMBT2907A is a PNP general purpose Transistor for amplifier and switching applications that require up to 500mA. High DC current gain and available with ultra small surface mount package.
- High current gain bandwidth
- 45ns Turn-on time
- 100ns Turn-off time
Infineon IRLML6401TRPBF0 out of 5(0)
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry’s smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.SKU: W008167
Diodes Inc. FMMT591A0 out of 5(0)
The FMMT591A is a PNP silicon planar medium power Bipolar Transistor offers 350mΩ low equivalent on resistance RCE (sat) at 1A.
- FMMT491A Complementary NPN type
- -55 to 150°C Operating temperature range
Diodes Inc. MMBT2222A0 out of 5(0)
The MMBT2222A-7-F is a 40V NPN Small Signal Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. The case is made of molded plastic, “Green” molding compound (UL94V-0). Complementary PNP type transistor is MMBT2907A. The transistor is ideal for low power amplification and switching.
- Epitaxial planar die construction
- Halogen and antimony-free
- Green device
- Qualified to AEC-Q101 standards for high reliability
Vishay IRFL110TRPBF0 out of 5(0)
The IRFL110TRPBF is a HEXFET® third generation N-channel Power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.
- Dynamic dV/dt rating
- Repetitive avalanche rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
ON Semiconductor NTF3055L108T1G0 out of 5(0)
The NTF3055L108T1G is a N-channel logic level Power MOSFET, designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
- AEC-Q101 Qualified
- PPAP capable