Cut Tape (CT)
|REACH SVHC Compliance|
|Voltage Rating (DC)|
|Number of Pins|
100 mA (max)
150 °C (max)
|Manufacturer Part Number||1SS355TE-17|
|Description||DIODE GEN PURP 80V 100MA UMD2 SOD-323F|
The 1SS355TE-17 is a surface mount silicon epitaxial planer Switching Diode features ultra small power mould type (UMD2) and high reliability. It is suitable for high speed switching.
- 150°C Junction temperature
Diotec 1N54060 out of 5(0)
The 1N5406G is a standard Recovery Rectifier with moulded epoxy case. It has solderable axial leads. It is suitable for use in power supplies and other applications.
- Cathode is indicated by polarity band
- High current to small size
- High surge current capability
- Low forward voltage drop
Microsemi 1N4148-10 out of 5(0)
This popular 1N4148-1 JEDEC registered switching/signal diode features internal metallurgical bonded construction for military grade products per MIL-PRF-19500/116. This small low capacitance diode, with very fast switching speeds, is hermetically sealed and bonded into a double-plug DO-35 package. It may be used in a variety of very high speed applications including switchers, detectors, transient OR’ing, logic arrays, blocking, as well as low-capacitance steering diodes, etc. Microsemi also offers a variety of other switching/signal diodes.SKU: W000440
ON Semiconductor MBRS340T3G0 out of 5(0)
The MBRS340T3G from On Semiconductor is surface mount “J” bent leaded schottky power rectifier in SMC (CASE 403-03 ) package. It features epitaxial construction with highly stable oxide passivated junction and metal contact. This device is intended for use in low voltage, high frequency rectification, freewheeling, polarity protection and applications where size and weight are critical to the system.
- Epoxy meets UL 94 V-0 @ 0.125 in
- Automotive grade AEC-Q101 qualified
- Guard ring for stress protection
- Maximum repetitive reverse voltage Vrrm of 40V
- Non repetitive forward surge current IFSM of 80A
- Forward current If(AV) of 3A at TL 110°C and 4A at TL 105°C
- Operating junction temperature of -65°C to 150°C
- Maximum forward voltage VF of 500mV at IF 3A
ON Semiconductor 1N58220 out of 5(0)
The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky Rectifier¿s state-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. It is ideally suited for use as rectifiers in low-voltage, high-frequency inverters, free wheeling diodes and polarity protection diodes.